光探测
拉曼光谱
极化(电化学)
光谱学
材料科学
光电子学
光学
物理
化学
光电探测器
物理化学
量子力学
作者
Lei Li,Sihan Yan,Wanyu Ma,Jia‐Han Zhang,Shaohui Zhang,Mingming Jiang,Lingfeng Gao,Weihua Tang,Zeng Liu
摘要
Polarization-sensitive photodetection has promising prospects for civilian and military applications based on anisotropic semiconductors. However, it is greatly limited due to the lack of valid materials as well as the terrible linear dichroism ratio. In this Letter, a metal–oxide–semiconductor β-Ga2O3 with strong anisotropic property is proposed for highly efficient polarizing detection, which can potentially overcome these limitations. Angle-resolved polarization Raman spectroscopy was performed to confirm excellent anisotropic phonon vibration. Unique narrow solar-blind polarization-sensitive photo-absorption (240–270 nm) can be observed, which can be attributed to the natural anisotropy, referring in particular to the polarization-resolved absorption in the surround of the bandgap of β-Ga2O3. Benefiting from the structural anisotropy, the polarization-sensitive photodetector exhibits an excellent linear dichroic ratio of ∼1.8. Moreover, obvious color change is observed under different polarized angles, providing great potential in polarization imaging. With these advantages, we anticipated that this research will pave avenues for the fabrication of polarization-sensitive solar-blind UV photodetectors.
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