神经形态工程学
光探测
光电探测器
材料科学
光电子学
计算机科学
卷积神经网络
图像传感器
人工智能
人工神经网络
作者
Peng Wang,Wuhong Xue,Jianmin Zeng,Wenjuan Ci,Qilai Chen,Baohua Lv,Ruilong Yang,Jing Wang,Gang Liu,Xiaohong Xu
标识
DOI:10.1002/adfm.202407746
摘要
Abstract With the rapid developments of Artificial Intelligence (AI) and the Internet of Things (IoT), increasingly intricate and expanding application scenarios are placing higher demands on current machine vision capabilities. Therefore, there is a pressing need to simultaneously achieve diverse functionalities, simple designs, and efficient computing in vision devices. Here, the study develops a two‐terminal optoelectronic device utilizing a single 2D intrinsic defect semiconductor In 2 S 3 . The device demonstrates wavelength‐selective photodetection and neuromorphic visual capabilities, attributed to defect‐related charge‐trapping/de‐trapping processes. As a photodetector, the device exhibits a high photoresponsivity of 473.6 A W −1 , a high external quantum efficiency of 1.6 × 10 5 %, and a fast rise/fall time of 0.3/1.4 ms at the wavelength of 359 nm. As an all‐in‐one neuromorphic visual device, optoelectronic‐driven fundamental synaptic functions, including paired‐pulse facilitation (PPF), short‐term plasticity (STP), long‐term plasticity (LTP), and “learning‐experience”, are successfully mimicked at the wavelength of 671 nm. Moreover, one‐shot recognition of the 12‐letter image “SHAN XI NORMAL” is achieved through an artificial convolutional neural network. This study provides a new strategy for developing compact high‐level intelligence systems for complex application scenarios.
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