无杂散动态范围
管道(软件)
逐次逼近ADC
放大器
电容器
晶体管
计算机科学
炸薯条
CMOS芯片
电子工程
电气工程
电压
工程类
程序设计语言
作者
Qidi Li,Youze Xir,Bing Zhang,Zirui Wang,Geng Lin
标识
DOI:10.1109/icta60488.2023.10364249
摘要
In this design, a new structure of ring amplifier (RA) is proposed to meet high-speed applications, which uses low threshold voltage transistors to increase the charge rate for capacitors. The stability is ensured by increasing the dead-zone voltage using series-connected transistors. In this design, it is utilized as an inter-stage amplifier in a 160 MS/s, 12 bits pipelined successive approximation (pipeline SAR) analog-to-digital converter (ADC). The pipeline SAR ADC is designed with a 55 nm CMOS process and occupies an overall chip area of 500 × 170 µm 2 . Without calibration, the dynamic performance of ADC achieves 58.56 dB for SNDR and 69.14 dB for SFDR.
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