A Quasi-Ballistic Model for Short Channel Monolayer Graphene Field Effect Transistor Including Scattering Effects

In this work, the Landauer approach-based short channel model of a graphene field effect transistor has been presented. The quasi-ballistic and ballistic transport mechanism is explained by this approach for nanoscale transistors. The concept of the virtual source is considered to obtain the carrier density in active regions. Here, we apply the Landauer approach for short-channel graphene field effect transistors relating to the parameter in the virtual source model. The mobility of the model has been improved including various scattering effects like impurity scattering, acoustic phonon scattering, and optical phonon scattering. The dynamic resistance model is considered due to asymmetry transport in the electron branch and hole branch. The proposed model has been verified with several experimental works for model validation. The comparisons of the model simulation with several experimental results that have been reported in the literature match well for different short channel lengths of graphene.