Synapse Neurotransmitter Channel‐Inspired AlOx Memristor with “V” Type Oxygen Vacancy Distribution

Abstract Memristor possesses great potential and advantages in neuromorphic computing, while consistency and power consumption issues have been hindering its commercialization. Low cost and accuracy are the advantages of human brain, so memristors can be used to construct brain‐like synaptic devices to solve these problems. In this work, a five‐layer AlO x device with a V‐shaped oxygen distribution is used to simulate biological synapses. The device simulates synapse structurally. Further, under electrical stimulation, O 2− moves to the Ti electrode and oxygen vacancy (V o ) moves to the Pt electrode, thus forming a conductive filament (CF), which simulates the Ca 2+ flow and releases neurotransmitters to the postsynaptic membrane, thus realizing the transmission of information. By controlling applied voltage, the regulation of Ca 2+ gated pathway is realized to control the Ca 2+ internal flow and achieve different degrees of information transmission. Long‐term Potentiation (LTP)/Long‐term Depression (LTD), Spike Timing Dependent Plasticity (STDP), these basic synaptic performances can be simulated. The AlO x device realizes low power consumption (56.7 pJ/392 fJ), high switching speed (25 ns/60 ns), and by adjusting the window value, the nonlinearity is improved (0.133/0.084), a high recognition accuracy (98.18%) is obtained in neuromorphic simulation. It shows a great prospect in multi‐value storage and neuromorphic computing.