Chirality‐Induced Memristor of Chiral Nanostructured Half‐Metallic Fe3O4 Films

Abstract Spintronic memristors, which combine the nonvolatile characteristics of memristors with the scalability of a spin‐transfer torque device, are expected to play a crucial role in advancing quantitative information processing. This field commonly relies on magnetic tunnel junctions, domain wall motion, and spin waves. Here, the discovery of chirality‐induced memristor behavior in chiral nanostructured Fe 3 O 4 films (CNFFs) is reported. These CNFFs are grown on fluorine tin oxide (FTO) substrates using enantiomeric glutamic acid (Glu) as symmetry‐breaking agents and consist of arrays of oriented twisted nanofibers. At 100 K, the L‐CNFF exhibits memristor behavior as a pinched hysteresis loop in the I‐V curve, while the D‐CNFF exhibits semiconductor behavior with constant electrical resistance. The intrinsic spin polarization of half‐metallic Fe 3 O 4 and the chirality‐induced spin selectivity (CISS) are speculated to contribute to the memristor in one handedness of the chiral structure. These findings present a novel spinristor that combines the functions of a memristor and a spin‐filter based on chiral structures, which may promote the development of spintronic devices.