Suppression of discontinuous precipitation and strength improvement by Sc doping in Cu-6 wt%Ag alloys

材料科学 兴奋剂 降水 晶界 成核 金属间化合物 电阻率和电导率 冶金 复合材料 变形(气象学) 体积分数 电导率 分析化学(期刊) 微观结构 光电子学 化学 合金 气象学 物理 有机化学 物理化学 工程类 电气工程 色谱法
作者
Bailing An,Rongmei Niu,Yan Xin,William Starch,Zhaolong Xiang,Yi‐Feng Su,Robert E. Goddard,Jun Lü,Theo Siegrist,Engang Wang,Ke Han
出处
期刊:Journal of Materials Science & Technology [Elsevier BV]
卷期号:135: 80-96 被引量:27
标识
DOI:10.1016/j.jmst.2022.06.043
摘要

• Sc doping significantly suppressed discontinuous Ag precipitates in Cu-Ag alloys. • Sc-doping led to a 55 MPa increase in strength, with only a slight decrease in conductivity. • Sc segregation at grain boundaries inhibited the nucleation of discontinuous precipitates • The UTS of Sc-doped samples was 1080 MPa, 205 MPa higher than that of non-doped samples. In low-Ag Cu matrix alloys, the presence of coarse discontinuous precipitates may limit strength. We demonstrated that discontinuous precipitation was suppressed, and continuous precipitation was enhanced by the doping of Cu-6 wt%Ag with Sc. A high-volume fraction of continuous precipitates, which nucleated on {111} planes, led to a 55 MPa increase in strength, with only a slight decrease in electrical conductivity. The addition of Sc inhibited the nucleation of discontinuous precipitates by causing the Sc and the Ag to co-segregate onto grain boundaries, thus forming a thin intermetallic compound layer between grains. After deformation, both discontinuous and continuous precipitates were drawn into Ag fibers. The combination of deformation strain and doping caused an increase in density and a decrease in the diameter of Ag fibers, resulting in about 205 MPa increase in doped samples when the deformation strain reached 4.9. The thinner, denser Ag fibers in the doped samples also caused higher electron scattering at interfaces, leading to electrical conductivity that was 11% IACS lower than in non-doped samples. For reference, 100% IACS (International Annealed Copper Standard) is equivalent to 1.7241 μΩ cm.
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