A Low-Cost Novel Structure for Paralleled SiC JFET/Si MOSFET Cascodes to Balance Turn-on Current and Junction Temperature

JFET公司 计算机科学 拓扑(电路) 电气工程 工程类 电压 场效应晶体管 晶体管
作者
Cheng Zhao,Laili Wang,Xu Yang,Yongmei Gan,Hong Zhang
出处
期刊:IEEE Transactions on Power Electronics [Institute of Electrical and Electronics Engineers]
卷期号:37 (12): 14447-14461 被引量:2
标识
DOI:10.1109/tpel.2022.3187113
摘要

SiC JFET/Si mosfet Cascodes (SSCs) are promising because of their small on -resistance and fast switching speed. Parallel operation of multiple SSCs is popular for high-current applications. However, the practical layout can hardly be absolutely symmetric. The mismatches from layout will cause turn- on current imbalance among paralleled SSCs. The maximum current stress will be aggravated for some SSCs. Besides, unbalanced current can lead to uneven losses. Then, the junction temperature difference (Δ T j ) between paralleled SSCs occurs. The maximum junction temperature ( T jmax ) among paralleled SSCs increases accordingly. To address the issue, a low-cost and novel structure is proposed to promote turn- on current sharing for paralleled SSCs. With aid of the structure, the immunity of turn- on current sharing performance to an asymmetric layout can be greatly improved. The mismatched turn- on current and losses can be well mitigated. Δ T j and T jmax are suppressed at the same time. The proposed structure is suitable for both the discrete SSCs and bare-die SSCs. In this structure, only some bridging branches are introduced so it takes almost no extra cost. Two prototypes are fabricated with the discrete SSCs and bare-die SSCs, respectively. Double-pulse test and continuous operation are conducted to validate the advantages of the proposed structure.
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