钙钛矿(结构)
材料科学
光电子学
二极管
半导体
晶体管
场效应晶体管
光电探测器
工程物理
发光二极管
继任枢机主教
纳米技术
电气工程
电压
工程类
数学分析
数学
化学工程
作者
Gnanasampanthan Abiram,Thanihaichelvan Murugathas,Punniamoorthy Ravirajan,Dhayalan Velauthapillai
出处
期刊:Nanomaterials
[MDPI AG]
日期:2022-07-13
卷期号:12 (14): 2396-2396
被引量:25
摘要
Perovskite materials are considered as the most alluring successor to the conventional semiconductor materials to fabricate solar cells, light emitting diodes and electronic displays. However, the use of the perovskite semiconductors as a channel material in field effect transistors (FET) are much lower than expected due to the poor performance of the devices. Despite low attention, the perovskite FETs are used in widespread applications on account of their unique opto-electrical properties. This review focuses on the previous works on perovskite FETs which are summarized into tables based on their structures and electrical properties. Further, this review focuses on the applications of perovskite FETs in photodetectors, phototransistors, light emitting FETs and memory devices. Moreover, this review highlights the challenges faced by the perovskite FETs to meet the current standards along with the future directions of these FETs. Overall, the review summarizes all the available information on existing perovskite FET works and their applications reported so far.
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