记忆电阻器
记忆晶体管
计算机科学
横杆开关
电阻随机存取存储器
晶体管
电子工程
电气工程
电压
工程类
电信
作者
K Soni.,Satyajeet Sahoo
标识
DOI:10.1109/mecon53876.2022.9752214
摘要
Because of its minor size, simple construction, and low power consumption, Memristor has attracted considerable attention as a potential next-generation memory device. It is possible to manufacture a memristor in a crossbar structure, which is a passive electronic device with a built-in non-volatile memory function. Numerous memristor replicas have been developed in the past to accomplish this loop with high accuracy using memristors. The researchers have also created various mathematical window functions to provide additional insight into the memristor model by increasing the degree of nonlinearity, resolving boundary effects, and resolving boundary locks. This review provides a concise summary of the various memristor models and their associated window functions that have been studied. This allows for a more thorough evaluation of the memristor’s advantages and drawbacks to be shown. This research also demonstrates the prevalent memristor properties as well as various switching mechanisms. The memristive technology’s future prospects are also thoroughly examined here, as the memristor has emerged as an innovative alternative to the semiconductor in memory technology. Memristor-based possible requests such as a nonvolatile memory applications, low-power and remote sensing applications, transistor replacement, etc are also explained briefly. To review concentrates on applying and performance of memristors, moreover as some crucial challenges and views on their future development.
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