自旋电子学
铁电性
异质结
材料科学
凝聚态物理
范德瓦尔斯力
物理
多铁性
电场
铁磁性
光电子学
量子力学
分子
电介质
作者
Liemao Cao,Xiaohui Deng,Guanghui Zhou,Shi‐Jun Liang,Chuong V. Nguyen,L. K. Ang,Yee Sin Ang
出处
期刊:Physical review
日期:2022-04-07
卷期号:105 (16)
被引量:30
标识
DOI:10.1103/physrevb.105.165302
摘要
Multiferroic van der Waals (vdW) heterostrucutres offers an exciting route towards novel nanoelectronics and spintronics device technology. Here we investigate the electronic and transport properties of multiferroic vdW heterostructure composed of ferromagnetic FeCl$_2$ monolayer and ferroelectric Sc$_2$CO$_2$ monolayer using first-principles density functional theory and quantum transport simulations. We show that FeCl$_2$/Sc$_2$CO$_2$ heterostructure can be reversibly switched from semiconducting to half-metallic behavior by electrically modulating the ferroelectric polarization states of Sc$_2$CO$_2$. Intriguingly, the half-metallic phase exhibits a Type-III broken gap band alignment, which can be beneficial for tunnelling field-effect transistor application. We perform a quantum transport simulation, based on a \emph{proof-of-concept} two-terminal nanodevice, to demonstrate all-electric-controlled valving effects uniquely enabled by the nonvolatile ferroelectric switching of the heterostructure. These findings unravels the potential of FeCl$_2$/Sc$_2$CO$_2$ vdW heterostructures as a building block for designing a next generation of ultimately compact information processing, data storage and spintronics devices.
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