带隙
异质结
光电子学
超晶格
光子学
紧密结合
有效质量(弹簧-质量系统)
材料科学
电子能带结构
宽禁带半导体
半导体
电子结构
光子晶体
物理
凝聚态物理
量子力学
作者
Y. Zhang,M. Liu,Debdeep Jena,Guru Khalsa
摘要
Rapid design and development of the emergent ultrawide-bandgap semiconductors Ga2O3 and Al2O3 require a compact model of their electronic structures, accurate over the broad energy range accessed in future high-field, high-frequency, and high-temperature electronics and visible and ultraviolet photonics. A minimal tight-binding model is developed to reproduce the first-principles electronic structures of the β- and α-phases of Ga2O3 and Al2O3 throughout their reciprocal spaces. Application of this model to α-Ga2O3/α-Al2O3 superlattices reveals that intersubband transitions can be engineered to the 1.55μm telecommunications wavelength, opening new directions in oxide photonics. Furthermore, by accurately reproducing the bandgap, orbital character, effective mass, and high-energy features of the conduction band, this compact model will assist in the investigation and design of the electrical and optical properties of bulk materials, devices, and quantum confined heterostructures.
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