Influence of Nanoscale Charge Trapping Layer on the Memory and Synaptic Characteristics of a Novel Rubidium Lead Chloride Quantum Dot Based Memristor

Abstract Memristors are one of the fastest developing electronic devices in the field of data storage and brain inspired neural computing. As a two terminal device, memristors are numerously utilized as resistive random access memories (RRAM) and energy efficient artificial synapses. Herein, the fabrication of perovskite‐type rubidium lead chloride quantum dots (RPCQDs) is reported as a functional layer in a memristive system. The device, Al/RPCQDs/indium doped tin oxide (ITO), exhibits a cycling‐induced decrease in SET voltage, where Al and ITO work as a top and bottom electrode respectively. However, time dependent self‐recovery to the pristine state is observed in the Al/RPCQDs/ITO device. In contrast, the self‐rejuvenation is suppressed when a buffer capped conducting polymer (BCCP) is incorporated on the ITO layer to make a Al/RPCQDs/BCCP/ITO structure. This customized device structure successfully retains the reproducible bipolar switching behavior without severe deviation in operating voltages, which helps in studying reliable memristive properties. In addition, the Al/RPCQDs/BCCP/ITO memristive device also demonstrates some essential synaptic functions such as pair‐pulse facilitation, long‐term potentiation, and long‐term depression.