Local structure and p–d hybridization of Mn-doped In2O3 films

Abstract Mn-doped In 2 O 3 films were deposited on Si (1 0 0) substrates by the RF-magnetron sputtering technique. The influence of Mn-doping concentration on the local structure and degree of p–d hybridization was investigated by x-ray absorption spectroscopy at the Mn K-edge and L 2,3 -edge. The results show that Mn ions dissolve in In 2 O 3 and substitute for In 3+ sites in the +2 valence states. With the increase in Mn-doping concentration, the Mn–O bonding distance increases monotonically, but integrated intensities of L 2,3 edges increase first and then decrease. It can be concluded that there exists an optimal Mn–O bonding distance for the transition probabilities from the 2p state to the p–d hybridization state, which results in increasing degree of p–d hybridization. So the Mn-doping concentration has a significant effect on the local structure and degree of p–d hybridization in Mn-doped In 2 O 3 films.