材料科学
电容器
电介质
离子
介电强度
场效应晶体管
栅极电介质
晶体管
随时间变化的栅氧化层击穿
原子物理学
光电子学
MOSFET
阻止力
电气工程
化学
物理
电压
工程类
有机化学
作者
J.L. Titus,C.F. Wheatley,K.M. van Tyne,J. Krieg,D.I. Burton,A.B. Campbell
出处
期刊:IEEE Transactions on Nuclear Science
[Institute of Electrical and Electronics Engineers]
日期:1998-12-01
卷期号:45 (6): 2492-2499
被引量:73
摘要
The effect of ion energy upon the ion-induced dielectric breakdown response of the capacitor response in vertical power metal-oxide semiconductor field effect transistors (MOSFETs) was investigated. The single event gate rupture response was experimentally determined using mono-energetic ion beams of copper, niobium, and gold. Irradiations were conducted using an ion species tuned to different energies, producing a range of linear energy transfer (LET) values for that ion. Numerous MOSFETs were characterized to identify the onset of ion-induced dielectric breakdown. These data along with previously taken data demonstrated that the ion-induced dielectric breakdown cannot be adequately described in terms of LET, but is better described in terms of atomic number (Z). Based upon these observations, a new semi-empirical expression is presented describing the critical ion-induced breakdown response in terms of Z instead of LET. This expression is shown to be a better single event gate rupture model of the capacitor response.
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