材料科学
锆
示踪剂
氧化物
氧化锆
薄膜
热氧化
锆合金
热的
冶金
化学工程
纳米技术
核物理学
热力学
物理
工程类
作者
G. Bakradze,Lars P. H. Jeurgens,Tolga Acartürk,Ulrich Starke,E. J. Mittemeijer
出处
期刊:Acta Materialia
[Elsevier]
日期:2011-10-18
卷期号:59 (20): 7498-7507
被引量:36
标识
DOI:10.1016/j.actamat.2011.08.035
摘要
Abstract Two-stage oxidation experiments using 16O and 18O isotopes were performed to reveal the governing atomic transport mechanism(s) in thin (thickness ( 1 0 1 ¯ 0 ) single-crystalline surfaces were prepared under ultra-high vacuum conditions by a cyclic treatment of alternating ion-sputtering and in vacuo annealing steps. Next, the bare Zr surfaces were oxidized at 450 K and at pO2 = 1 × 10−4 Pa, first in 16O2(g) and subsequently in 18O2(g). The 18O-tracer depth distributions in the oxide films were recorded by time-of-flight secondary ion mass spectrometry. It was concluded that the early stage of the oxidation process is governed by oxygen transport to the metal/oxide interface through the lattice and along the grain boundaries of the nanosized oxide grains whereas, on continuing oxidation, only oxygen lattice transport controls the oxidation process. An oxide-film growth mechanism is proposed.
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