赝势
介电函数
凝聚态物理
电介质
六方晶系
材料科学
态密度
各向异性
导带
GSM演进的增强数据速率
带隙
电子能带结构
紫外线
密度泛函理论
光电子学
光学
化学
物理
结晶学
计算化学
电子
电信
量子力学
计算机科学
作者
Keun‐Ho Lee,C.H. Park,Byoung‐Ho Cheong,K. J. Chang
标识
DOI:10.1016/0038-1098(94)90918-0
摘要
We examine the optical properties of SiC in the 3C, 2H, 4H, and 6H structures through first-principles pseudopotential calculations. The dielectric response function in the optical limit exhibits anisotropic behaviour for the hexagonal polytypes, which arises from hexagonal crystal fields. In the 6H structure, we find that the density of states near the conduction band edge is rapidly increasing and the optical response is significantly enhanced in the ultraviolet energy region. Such peculiar behaviour in the density of states and the dielectric response lead us to understand that 6H SiC is a more promising material for optical devices, compared with other polytypes.
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