半最大全宽
材料科学
电极
电容器
衍射
分析化学(期刊)
薄膜
溅射沉积
溅射
电介质
纹理(宇宙学)
光电子学
光学
纳米技术
化学
电气工程
电压
物理
图像(数学)
物理化学
色谱法
人工智能
计算机科学
工程类
作者
T. Aoyama,S. Yamazaki,Keitaro Imai
摘要
Ru films were fabricated by dc magnetron sputtering in an Ar/O 2 mixture ambient in order to examine the Ru films as electrodes of Ba 0.5 Sr 0.5 TiO 3 (BST) thin-film capacitors. The 100-nm-thick Ru film deposited on Si at 450°C at an O 2 /(Ar+O 2 ) flow ratio of 40% at 0.5 kW was textured along c -axis. The full-width at half maximum (FWHM) of 3.14° was obtained for the Ru (002) diffraction peak in an X-ray diffraction (XRD) pattern. BST films deposited on the Ru bottom electrode were also textured along (110). The relative dielectric constant of BST films increased with a decrease in the FWHM of BST (110). The relationship between electrical properties of Ru/BST/Ru capacitors and the orientation of the Ru bottom electrode and BST films was also investigated.
科研通智能强力驱动
Strongly Powered by AbleSci AI