Impact of Cr2O3 additives on the gas-sensitive properties of β-Ga2O3 thin films to oxygen, hydrogen, carbon monoxide, and toluene vapors

一氧化碳 工作温度 氧气 甲苯 大气温度范围 薄膜 材料科学 碳纤维 分析化学(期刊) 化学工程 无机化学 化学 催化作用 纳米技术 有机化学 复合材料 热力学 物理 工程类 复合数
作者
А. V. Аlmaev,Evgeny V. Chernikov,V. A. Novikov,Bogdan O. Kushnarev,Nikita Yakovlev,Ekaterina V. Chuprakova,V. L. Oleînik,A. Lozinskaya,D. Gogova
出处
期刊:Journal of vacuum science & technology [American Vacuum Society]
卷期号:39 (2) 被引量:23
标识
DOI:10.1116/6.0000723
摘要

High-temperature β-Ga2O3:Cr2O3-based sensors sensitive to oxygen- and hydrogen-containing gases have been developed and studied. Magnetron cosputtering is the method of choice for the thin film synthesis as an industry-compatible technique. The composition-structure-properties relationship has been revealed. An introduction of 0.04–0.14 wt. % Cr leads to a significant increase in the response of the O2 sensors over the temperature range 250–400 °C. The highest response in the above-mentioned temperature range has been achieved for a Cr addition of 0.14 wt. %. An increase in the Cr content from 0.04 to 0.22 wt. % leads to a decrease in the β-Ga2O3-based sensors’ response time, especially for low O2 concentrations (≤10 vol. %). Reliable control of the β-Ga2O3:Cr2O3-based sensors’ selectivity to industry-relevant reducing gases—hydrogen, carbon monoxide, and toluene—is demonstrated. β-Ga2O3 films with a Cr incorporation content of 0.04 and 0.06 wt. % have a high response to toluene at operating temperatures 300–500 °C, while the films with 0.14 and 0.22 wt. % Cr have a high response to H2 in the range 400–500 °C. Regardless of the Cr content in β-Ga2O3 thin films, all sensors considered demonstrate a weak response to CO within the operating temperature range 250–500 °C. The results attained are of certain technological importance, i.e., in terms of the development of cost-effective methods for the synthesis of materials and systems for monitoring and control of industry-relevant gases for an environmentally friendly and sustainable growth.
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