J. Kennedy,G. V. M. Williams,Peter P. Murmu,B. J. Ruck
出处
期刊:Physical Review B [American Physical Society] 日期:2013-12-23卷期号:88 (21)被引量:109
标识
DOI:10.1103/physrevb.88.214423
摘要
We report the results from magnetic, resistivity, and Hall effect measurements on a ferromagnetically ordered 5% Gd low energy implanted ZnO single crystal. Temperature-dependent magnetization measurements show that the Gd ions do not contribute to the magnetic order; hence, the magnetic order is intrinsic. The electronic transport in the Gd-implanted region is inhomogeneous, and there is a nonlinear Hall resistance. The nonlinear Hall resistance is likely to be a consequence of the inhomogeneous transport and not due to an anomalous Hall effect.