R. Azar,F. Udrea,Wai Tung Ng,F.P. Dawson,W. Findlay,P. Waind,G.A.J. Amaratunga
出处
期刊:IEE proceedings [Institution of Electrical Engineers] 日期:2004-01-01卷期号:151 (3): 249-249被引量:13
标识
DOI:10.1049/ip-cds:20040448
摘要
A novel IGBT electrothermal model is implemented for the first time in PSpice for the simulation of steady state and transient temperature dependent IGBT operation including self-heating and latchup. A thermal circuit representing the characteristics of the IGBT package is developed and validated against a finite element model and experimental results. A novel electrical IGBT model based on the Kraus model is developed to account for the electrical impact of instantaneous junction temperature variations owing to self-heating. The resulting electrothermal model is validated against experimental DC and transient FBSOA measurements.