碳化硅
MOSFET
班级(哲学)
物理
材料科学
硅
电气工程
光电子学
计算机科学
电压
工程类
晶体管
人工智能
冶金
作者
Masakazu Baba,Takehiko Tawara,Tadao Morimoto,Shinsuke Harada,Manabu Takei,Hiroshi Kimura
标识
DOI:10.23919/ispsd50666.2021.9452273
摘要
We developed 3.3 kV-class silicon carbide superjunction (SJ) MOSFETs and demonstrated their excellent static and dynamic properties. The full-SJ device exhibited ultra-low R on A of 3.3 mΩcm 2 at room temperature (RT) and 6.2 mΩcm 2 at 175 °C. The small reverse recovery charge of SJ devices at RT and 175 °C was realized by injection level suppression. Owing to these advantages, superior total power loss was estimated when the SJ-devices were operated as a half-bridge synchronous rectifier.
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