Nonstoichiometric effect of A-site complex ions on structural, dielectric, ferroelectric, and electrostrain properties of bismuth sodium titanate ceramics

材料科学 电介质 铁电性 化学计量学 陶瓷 电导率 磁滞 粒度 电阻率和电导率 矿物学 介电损耗 钛酸铋 钙钛矿(结构) 四方晶系 分析化学(期刊) 介电常数 相变 离子 相(物质) 化学工程 介电谱
作者
Amei Zhang,Ruiyi Jing,Meng Zhuang,Hongping Hou,Leiyang Zhang,Jie Zhang,Xu Lu,Yangxi Yan,Hongliang Du,Li Jin
出处
期刊:Ceramics International [Elsevier]
卷期号:47 (23): 32747-32755 被引量:1
标识
DOI:10.1016/j.ceramint.2021.08.171
摘要

To investigate the nonstoichiometric effect of (Bi 0.5 Na 0.5 )TiO 3 (BNT) ceramics on their properties, we propose a novel chemical expression, (Bi 0.5+ x Na 0.5−3 x )TiO 3 . The nonstoichiometric effect of BNT can be explored in compounds with this composition without being hampered by the charge imbalance problem. With x ranging from −0.02 to 0.02, we find that the morphological, dielectric, ferroelectric, and electrostrain properties differ considerably between Na-rich and Bi-rich ceramic samples. The average grain size (AGS) increased significantly in Na-rich samples compared to that in stoichiometric BNT, while it decreased slightly in Bi-rich samples. The dielectric characteristics measured from 30 °C to 500 °C indicate that conductivity is activated in Na-rich nonstoichiometric samples but is effectively suppressed in Bi-rich nonstoichiometric samples. The ferroelectric properties also show the same trend. In Na-rich samples, elliptical polarization against electric field ( P - E ) hysteresis loops were detected, indicating a conductive character induced by high electric field loading. However, saturated P - E loops are observed in Bi-rich samples with well-inhibited conductivity. Furthermore, compared to stoichiometric BNT and nonstoichiometric x = 0.02 Bi-rich samples, (Bi 0.5+ x Na 0.5−3 x )TiO 3 samples with x = 0.01 exhibit higher electrostrain from 30 °C to 150 °C. Based on the assumption of charge balance, our findings indicated that the presence of 1 mol% excess Bi would facilitate significant improvement in the dielectric, ferroelectric, and electrostrain properties of BNT and BNT-based systems.

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