X射线光电子能谱
材料科学
表征(材料科学)
硅
电接点
电子能量损失谱
光电子学
透射电子显微镜
串联
氧化物
纳米技术
分析化学(期刊)
图层(电子)
化学工程
化学
复合材料
冶金
工程类
色谱法
作者
Stefan Lange,Angelika Hähnel,Gao Yiding,Stephan Krause,M. Rumiantcev,Alexander Müller,Volker Naumann,Christian Hagendorf
标识
DOI:10.1109/pvsc43889.2021.9518847
摘要
Electrical transport losses at semiconductor interfaces play a crucial role in the performance of next generation tandem solar cells or hybrid solar cells for photo-electrochemical applications. Key material parameters are the interfacial composition and electronic states on the nanoscale. In this contribution, we investigate sputtered Al/ZnO:Al layer stacks as model system for interfacial oxide formation under different O 2 /Ar partial pressure ratios and temperature treatments. X-ray photoelectron spectroscopy (XPS) and energy-dispersive X-ray spectroscopy (EDX) in a transmission electron microscope (TEM) are used to characterize the interfacial structure and composition on atomic dimensions. Micro transfer length measurements (µTLM) are performed to evaluate the local electrical transport properties with enhanced sensitivity. The application of the presented characterization workflow on contact structures in complex multi-layer systems, e.g. perovskite silicon tandem solar cells, is discussed.
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