钙钛矿(结构)
工作职能
材料科学
三氧化钼
卤化物
图层(电子)
带材弯曲
光电发射光谱学
氧化物
碘化物
钼
化学工程
光电子学
无机化学
纳米技术
X射线光电子能谱
冶金
化学
工程类
作者
Philip Schulz,Jan Tiepelt,Jeffrey A. Christians,Igal Levine,Eran Edri,Erin M. Sanehira,Gary Hodes,David Cahen,Antoine Kahn
标识
DOI:10.1021/acsami.6b10898
摘要
We investigate the effect of high work function contacts in halide perovskite absorber-based photovoltaic devices. Photoemission spectroscopy measurements reveal that band bending is induced in the absorber by the deposition of the high work function molybdenum trioxide (MoO3). We find that direct contact between MoO3 and the perovskite leads to a chemical reaction, which diminishes device functionality. Introducing an ultrathin spiro-MeOTAD buffer layer prevents the reaction, yet the altered evolution of the energy levels in the methylammonium lead iodide (MAPbI3) layer at the interface still negatively impacts device performance.
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