热离子发射
石墨烯
材料科学
异质结
非平衡态热力学
电导
量子隧道
光电子学
场效应晶体管
晶体管
凝聚态物理
纳米技术
物理
电子
量子力学
电压
作者
Ashkan Horri,Rahim Faez,Mahdi Pourfath,Ghafar Darvish
摘要
In this paper, for the first time, we present a computational study on electrical characteristics of field effect tunneling transistors based on a vertical graphene-WS2 heterostructure and vertical graphene nanoribbon (GNR)-WS2 heterostructure (VTGNRFET). Our model uses the nonequilibrium Green's function formalism along with an atomistic tight binding (TB) method. The TB parameters are extracted by fitting the bandstructure to first principles results. We show that, due to the advantage of switching between tunneling and thermionic transport regimes, an improvement can be achieved in the electrical characteristics of the device. We find that the increase of the number of WS2 layers enhances the on/off conductance ratio but degrades the intrinsic gate-delay time. The results indicate that the on/off conductance ratio of VTGNRFET increases with decreasing the GNR width.
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