材料科学
量子点
光电子学
光电探测器
带隙
纳米技术
紫外线
工程物理
物理
作者
Taehyun Park,Dong Hyun Lee,Jaehyun Hur,Hocheon Yoo
标识
DOI:10.1002/adom.202302466
摘要
Abstract Since their discovery in 1981, quantum dots (QDs) have been the center of attention in optoelectronic fields owing to their excellent properties such as clearly discrete band structure, high luminous efficiency, and tunable energy bandgap via dot size control. Among them, the bandgap increase characteristic based on the quantum confinement effect opens a new horizon in the field of deep ultraviolet photodetectors (DUV PDs). Emerging applications such as risk monitoring, wireless optical communication, and chemical sensing with extremely low environmental interference raise the significance of DUV PDs. Nonetheless, the limited material selection for DUV absorption has been the main obstacle for further applications. Along this line, this review systematically revisits the recent advances in QD‐based DUV PDs, using bandgap‐widened QDs, with a focus on the synthetic method, device architecture, and interactions among constituent components. Various QDs categorized into carbon, oxide, sulfide, and nitride are reviewed with the specific characteristics of each substance. The future prospects of QD‐based DUV PDs in terms of practical applications and the current challenges are discussed.
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