材料科学
聚焦离子束
光电子学
六方氮化硼
光子学
纳米
离子注入
纳米技术
离子束
纳米尺度
退火(玻璃)
亮度
离子
梁(结构)
光学
石墨烯
物理
量子力学
复合材料
作者
Guan‐Lin Liu,Xinyu Wu,Pengtao Jing,Zhen Cheng,Da Zhan,Yang Bao,Jiaxu Yan,Hai Xu,Ligong Zhang,Binghui Li,Kewei Liu,Lei Liu,Dezhen Shen
标识
DOI:10.1002/adom.202302083
摘要
Abstract The 2D layered hexagonal boron nitride (hBN) material is a promising platform for making single photon emitters (SPEs). Integrate SPEs with photonic cavities or waveguides, requires the deterministic positioning of these emitters as accurately as possible. Among all of the alternative techniques, He + focused ion beam (FIB) theoretically has sub‐nanometer precision, but its practical positioning accuracy in processing SPEs is limited by the inevitable detrimental byproduct defects. So far, it remains challenging to achieve an accuracy below 100 nm for the positioning of SPEs in hBN. Here, we present a two‐step method for creating SPEs at the predetermined positions in hBN that combines the He + FIB irradiation and thermal annealing under an oxygen atmosphere. With this method, we have realized the positioning accuracy of less than 50 nm, which, to the best of our knowledge, stands as the highest among the currently available hBN SPEs preparation methods. Moreover, the SPE conversion yield was over 35% and the emission brightness of individual SPE achieved up to 3 × 10 5 counts/s at room temperature. These SPEs fabricated precisely with nanoscale accuracy in hBN are expected to be good candidates for making large‐scale integrated SPEs in photonic circuits.
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