存水弯(水管)
降级(电信)
接口(物质)
频道(广播)
MOSFET
材料科学
关系(数据库)
光电子学
工程物理
电气工程
环境科学
物理
计算机科学
工程类
复合材料
晶体管
环境工程
毛细管数
电压
数据库
毛细管作用
作者
Tatsuya Suzuki,Yoshiyuki Miyaki,Yuichiro Mitani
标识
DOI:10.35848/1347-4065/ad2bbb
摘要
Abstract In general, the degradation mechanism of MOSFETs has been discussed relating hydrogen. For instance, the interface traps are created due to the Si-H bond breakage at the MOS interface by hot carriers under electrical stressing. In addition, it is also reported that hydrogen also relates to the bulk trap creation. However, these hydrogen-related degradation mechanisms have been discussed based on the results within conventional measurement temperature region. However, the degradation mechanisms at cryogenic temperature have yet to be fully clarified. In this paper, the degradations of MOSFETs under a channel hot carrier stressing in the temperature range of 77 K ~ 300 K are investigated. Especially, we focus on the degradation of MOSFETs due to the interface trap creation. As a result, the MOSFETs degrade more under cryogenic temperature comparing to that near at the room temperature. This result implies the existing the additional degradation mechanism at cryogenic temperature.
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