发光二极管
金属有机气相外延
光电子学
材料科学
频道(广播)
拉伤
流量(数学)
计算机科学
复合材料
电信
物理
外延
机械
生物
图层(电子)
解剖
作者
Kazuhiro Ohkawa,Martin Velazquez-Rizo,Mohammed A. Najmi,Daisuke Iida
摘要
For the development of efficient red LEDs with high-In-content InGaN quantum wells (QWs), we have developed the micro-flow-channel MOVPE method. This MOVPE can grow high-In-content InGaN at higher growth temperatures, resulting in higher quality. Also, we have introduced the strain compensation method at the QW region. Barrier layers consisting of Al(Ga)N could compensate for a compressive strain induced by InGaN. The strain compensation method has improved LED efficiency and elongated peak EL electroluminescence.
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