CMOS芯片
串行解串
电子工程
线性
带宽(计算)
跨阻放大器
沉降时间
电气工程
逆变器
计算机科学
工程类
电压
电信
放大器
运算放大器
阶跃响应
控制工程
作者
Taeyang Sim,Sunoh Yeom,Hyunwoo Im,Y. D. Oh,Hyeongmin Seo,Hyeongjun Ko,Hankyu Chi,Hae-Kang Jung,Jaeduk Han
出处
期刊:IEEE Transactions on Circuits and Systems Ii-express Briefs
[Institute of Electrical and Electronics Engineers]
日期:2024-03-01
卷期号:71 (3): 1012-1016
标识
DOI:10.1109/tcsii.2023.3324254
摘要
In this paper, a four-level pulse amplitude modulation (PAM-4) receiver for single-ended memory interfaces is presented. The frontend signaling path is optimized to maximize the receivers bandwidth in combination with a T-coil that mitigates the loading effect of the electrostatic discharge (ESD) protection cell. The following continuous-time linear equalizer (CTLE) employs an inverter-based TAS-transimpedance (TIA) stage in a subtraction configuration to compensate for the channel loss. The dual-path T-coil is optimally designed for the CTLE core based on the characteristics of the low and high-frequency signaling paths of the subtractive equalizer to maximize the bandwidth of the high-frequency path. The complementary transconductances with current biasing achieve high gain, wide linearity, and high power supply rejection ratio (PSRR). The output common-mode of the CTLE is balanced across the entire input range by adopting an auxiliary TAS and suppressing the gain mismatch. The proposed single-ended PAM-4 receiver is fabricated in a 40-nm CMOS technology and occupies 0.014 mm2. The design operates at 28-Gb/s with a 10-12 bit error rate (BER) and consumes 21.51 mW, which corresponds to 0.77-pJ/bit energy efficiency.
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