Ultra-high throughput electron beam lithography for wafer size nanoimprint mold fabrication

Electron Beam Lithography (EBL) has a capability to fabricate fine patterns with nanometer order, and is thought to be one of the possible technologies to fabricate a nanoimprint mold with the pattern size less than several 100 nm. We have developed Ultra-High Throughput EBL system, which equipped an Electron Optical Column (EOC) with a large beam current, and a large deflection field for fabricating a nanoimprint mold with wafer size. “ELF-10000” is the first model of our Ultra-High Throughput EBL, which has a deflection field of 10 mm square. And, we achieved to the drawing time of 4 hour 14 minutes to fabricate a mixed pattern of micron size and nanometer sizes on entire surface of 8 inch wafer. Moreover, we have improved the field stitching accuracy of the EBL system, and released the new model “ELSHAYATE”. It has 5 mm square field size, which is a half of the first model and has the field distortion less than half. This new model is expected to be a useful tool for nanometer order pattern drawings on the area larger than 10 mm square, which may have several possible applications for wafer size nanoimprint mold.