凝聚态物理
铁磁性
无缝回放
霍尔效应
磁电阻
材料科学
电阻率和电导率
磁化
自旋(空气动力学)
散射
电子迁移率
合金
物理
磁场
冶金
热力学
量子力学
光学
作者
Cheng Zhang,Shuang Pan,Peihao Wang,Y. P. Men,Xiang Li,Yuqing Bai,Li Tang,Feng Xu,Guizhou Xu
摘要
Spin gapless semiconductor (SGS) has attracted much attention since its theoretical prediction, while concrete experimental hints are still lacking in the relevant Heusler alloys. Here in this work, by preparing the series alloys of Mn2CoGa1−xAlx (x = 0, 0.25, 0.5, 0.75, and 1), we identified the vanishing of the anomalous Hall effect in the ferromagnetic Mn2CoGa (or x = 0.25) alloy in a wide temperature interval, accompanying with growing contribution from the ordinary Hall effect. As a result, comparatively low carrier density (1020 cm−3) and high carrier mobility (150 cm2/V s) are obtained in the Mn2CoGa (or x = 0.25) alloy in the temperature range of 10–200 K. These also lead to a large dip in the related magnetoresistance at low fields. However, in a high Al content, although the magnetization behavior is not altered significantly, the Hall resistivity is, instead, dominated by the anomalous one, just analogous to that widely reported in Mn2CoAl. The distinct electrical-transport behavior of x = 0 and x = 0.75 (or 1) is presently understood by their possible different scattering mechanism of the anomalous Hall effect due to the differences in the atomic order and conductivity. Our work can expand the existing understanding of the SGS properties and offer a better SGS candidate with higher carrier mobility that can facilitate the application in the spin-injected related devices.
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