Ge-on-Si single-photon avalanche diode using a double mesa structure

We present experimental results of Ge-on-Si single-photon avalanche diodes based on a novel, to our knowledge, double mesa structure. Using this structure, the electric field at the mesa edges is suppressed compared to a traditional single mesa, leading to significant performance improvements. The dark current in linear mode shows a smaller increase for larger reverse voltages, resulting in a reduction by more than 260 times at low temperatures. Operated in the Geiger-mode at 110 K, the dark count rate in the double mesa is 100 times smaller. The devices achieve a dark count rate of 953 kHz, a single-photon detection efficiency of 7.3%, and a record-low jitter of 81 ps at an excess bias of 17.6% and a temperature of 110 K.