材料科学
晶界
镍
兴奋剂
冶金
光电子学
微观结构
作者
Sanchit Kumar,Chaitali Mondal,Abhigyan Dutta,Ankurava Sinha
标识
DOI:10.1149/2162-8777/ad6503
摘要
This study explores the impact of doping with Ho, Gd, and La on sol-gel-derived nickel ferrites through a comprehensive analysis using various analytical techniques. The combination of X-ray diffraction (XRD) analysis, X-ray fluorescence (XRF) spectra analysis, impedance spectroscopy, and I-V analysis enables a detailed exploration of the structural, compositional, and electrical characteristics of the samples. Williamson-Hall plots in XRD analysis reveal crucial insights into grain and grain boundary impacts, revealing a shift in trends for doped samples indicative of tensile strain and underscores the influence of dopant ions on lattice distortion. XRF study confirms the elemental composition of the samples, validating the experimental approach. Impedance spectroscopy sheds light on conduction mechanisms and charge transfer processes, while the modulus study identifies distinct relaxation peaks corresponding to grain and grain boundary relaxation mechanisms. IV analysis demonstrates a significant reduction in leakage current with rare Earth element doping, suggesting promising applications.
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