多铁性
堆积
凝聚态物理
量子霍尔效应
图层(电子)
材料科学
物理
纳米技术
核磁共振
量子力学
磁场
光电子学
铁电性
电介质
作者
Yuping Tian,Chaobo Wang,Linyang Li,Xiangru Kong,Wei‐Jiang Gong
摘要
Exploring the physics coupled with layer degrees of freedom in materials has become a hot topic in quantum layertronics. We propose a robust second-order topological insulator monolayer RuOHX (X = F, Cl, and Br), a two-dimensional ferromagnetic semiconductor with large valley polarization, capable of undergoing topological phase transition induced by strain effect. In the bilayer RuOHX, we achieve layer-polarized anomalous Hall effect through interlayer sliding, originating from layer-stacking Berry curvature. Moreover, it can be controlled and reversed by the direction of ferroelectric polarization. Under appropriate biaxial strain, the bilayer RuOHX exhibits quantum layer spin Hall effect in which the helical edge states are manifested as spin-chirality-locking, due to the degeneracy of layer-polarized quantum anomalous Hall effect. Our work explores the potential application via layer-stacking topological properties for future quantum device applications.
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