(Invited) Novel Brush Design for Post CMP Cleans

Chemical Mechanical Polishing (CMP) process is one of the key processes in semiconductor wafer processing. A sub 10nm wafer fabrication process may require more than 40 dielectric and metal CMP steps. As CMP process requirements get more stringent, CMP slurries are formulated with smaller and smaller metal oxide abrasive particles. The abrasive particles may also be surface modified or doped with other metal oxides. Post CMP cleaning chemistry formulations are designed to remove polish byproducts, pad residues and abrasive particles from wafer surface. Chemical composition and PH are tuned for modulating wafer surface-particle interactions so brushes can mechanically “sweep” them off the surface. PVA brushes, used of post CMP cleans, are a highly porous network of crosslinked polyvinyl acetate with pore size in the range of 30 – 100 um and 80% - 90% porosity, depending on the type of brush being used. While PVA brushes have largely met the process capability requirements, they have limitations for advanced cleans such as nano-particle removal. As CMP process continues to expand to new dielectric and metal films for different process steps in wafer fabrication, there is a need for customized brush material and surface design for optimal cleaning efficiency. We discuss a new engineered post CMP brush design that shows high efficiency in nano-particle cleans and allows high level of material tunability. New brush design is an engineered composite with an open cell microporous core, overlaid with engineered fibers in form of loops. Brush design is compatible with existing post CMP cleans. Figure 1(a) shows the new design, where in DIW enters the brush through the center of microporous core and flows outwards to the surface. As water exits the surface, it flows over and across the loops and contacts the wafer surface. Flow resistance through core and loops can be independently tuned, which allows better fluid distribution and more effective cleans. Figure 1(b) show a close-up schematic of interaction between loop and particle. Flexing of the loops on brush surface provides improved contact as well as cleaning ability Brush design can be optimized for chemical and mechanical properties with choice of fiber material, fiber diameter and loop height. Figure 2 shows the Zeta potential of PVA and different loop materials. The fiber material maybe selected such that zeta potential of the loops can enhance mechanical action in removing particle. Mechanical action of the Loops can be modeled as a cantilever and force on the particle is exerted by flexing of the loops. Deflection of loops can be approximated with flexure stiffness of rods with point load at free end. For initial purposed loop is approximated as single element. The equation can be rewritten to calculate cleaning force P at the free end for given loop deflection (Y), P = 3EIY/L 3 (1) Where E is elastic modulus, I = moment, L = length of fiber and for rod shapes; I = Pi*(r 4 /4) The adhesion of particles on the surface is due to the effect of van der Waals and electrostatic forces. The total adhesion force on the surface can be written as: F =F vdw + F edl (2) where Ft is total adhesion force, Fvdw is the van der Waals force, and Fedl is the electrostatic force. F vdw = AR/6r2 (3) Where A is the Hamaker constant, R is particle radius, r is the separation distance For effective removal of particles, P >/= F (4) Flex force and adhesion force were modeled based on equation (1) and (3) and are shown in Figure 3. New brush design was used for post CMP cleaning of silicon dioxide wafers polished with ceria slurry. Two different brush designs were tested for cleaning efficiency. Modeling data and comparison with experimental results is presented. Figure 1