范德瓦尔斯力
单层
异质结
材料科学
光电发射光谱学
结晶学
钒
物理
凝聚态物理
纳米技术
X射线光电子能谱
化学
核磁共振
量子力学
分子
冶金
作者
Kazuki Sumida,S. Kusaka,Yukiharu Takeda,Katsuyoshi Kobayashi,Toru Hirahara
标识
DOI:10.1103/physrevb.106.195421
摘要
Two-dimensional van der Waals vanadium selenide compounds are expected to be a key platform for searching the new emergent phenomena by forming the artificial heterostructures. Here, we systematically investigated the electronic properties of monolayer and multilayer vanadium selenide films grown with different conditions using in situ angle-resolved photoemission spectroscopy and first-principles calculations. We observed the band dispersions of pristine ${\mathrm{VSe}}_{2}$ in a sample grown at substrate temperature (${T}_{\mathrm{sub}}$) of $250{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$, whereas the significant modulations of the Se-derived bands can be seen at ${T}_{\mathrm{sub}}$ = $380{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$. For ${T}_{\mathrm{sub}}=420{\phantom{\rule{0.16em}{0ex}}}^{\ensuremath{\circ}}\mathrm{C}$, we found that the V self-intercalated ${\mathrm{V}}_{5}{\mathrm{Se}}_{8}$ was formed. As a simple and convenient way, we also demonstrate that the monolayer ${\mathrm{V}}_{5}{\mathrm{Se}}_{8}$ can be fabricated by annealing from the multilayer ${\mathrm{VSe}}_{2}$ film, and the possible formation mechanism is discussed. The establishment of the growth methods of the ${\mathrm{V}}_{5}{\mathrm{Se}}_{8}$ film and verifying its electronic properties provide the substantial step for the creation of the two-dimensional van der Waals heterostructures.
科研通智能强力驱动
Strongly Powered by AbleSci AI