钝化
晶体硅
光伏系统
GSM演进的增强数据速率
开路电压
硅
光电子学
太阳能电池
工艺工程
材料科学
复合材料
电气工程
电压
计算机科学
工程类
电信
图层(电子)
作者
Wenheng Li,Xiao Wang,Jianxin Guo,Xuning Zhang,Bingbing Chen,Jingwei Chen,Qing Gao,Xueliang Yang,Feng Li,Jianming Wang,Dengyuan Song,Shufang Wang,Han Li,Jianhui Chen
标识
DOI:10.1002/aesr.202200154
摘要
The main hurdle to the upgradation of photovoltaic industry is the large performance losses that the tunnel oxide passivated contact (TOPCon) and silicon heterojunction (SHJ) cells have during the cutting and separating process for the assembly of shingle solar panels. Here, an organic solution with the passivation effect is prepared in situ by a non‐vacuum spraying process, which effectively compensates the cutting loss caused by laser slicing technology. Both the open‐circuit voltage ( V oc ) and power conversion efficiency (PCE) are improved. For example, after edge passivation, the V oc and PCE of the 3 × 3 cm 2 SHJ ( K = 1.186%) cell increase by up to 8 mV and a 1–2% in absolute efficiency, respectively. This passivation‐solution based method can be easily integrated into the current production line and thus solve the issue of cutting loss in separated silicon solar cells. This study provides a new passivation technology to compensate the recombination loss on the edge surface caused by the cutting process in shingle solar panels.
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