材料科学
钙钛矿(结构)
光伏系统
光电子学
互连
激光器
工程物理
薄脆饼
边坡效率
光学
电气工程
计算机科学
波长
化学工程
电信
物理
工程类
光纤激光器
作者
Yanyan Gao,Chong Liu,Yi Xie,Rilang Guo,Xuqi Zhong,Huanxin Ju,Li Qin,Peng Jia,Shaohang Wu,R.E.I. Schropp,Yaohua Mai
标识
DOI:10.1002/aenm.202202287
摘要
Abstract Overcoming cell‐to‐module (CTM) efficiency losses is indispensable to realize large‐area high‐efficiency perovskite photovoltaic devices for commercialization. Laser scribing technology is used to fabricate perovskite modules, but it does not seem to solve the problem of high‐quality interconnection and high geometric filling factor (GFF), which are the prerequisites for overcoming CTM losses. In reality, what kind of laser technology is needed to fabricate high‐efficiency perovskite solar modules is still an open question. Herein, this work demonstrates that a nanosecond pulse laser is able to deliver a reduced heat‐affected zone due to the small thermal diffusion coefficient ( D t ) of perovskite material, contributing to the accomplishment of a high GFF of up to 95.5%. In addition, the monolithic interconnection quality is improved by finely lifting off the capping layers on indium tin oxide and identifying the residue within the scribed area. As a result, a certified aperture area efficiency of 21.07% under standard 100 mW cm −2 AM1.5G illumination is achieved with a high photovoltaic fill factor exceeding 80%. The present study provides guidance in overcoming key CTM efficiency losses in perovskite photovoltaic technology.
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