亲爱的研友该休息了!由于当前在线用户较少,发布求助请尽量完整地填写文献信息,科研通机器人24小时在线,伴您度过漫漫科研夜!身体可是革命的本钱,早点休息,好梦!

Effects of High-Energy X-ray Irradiation on the Electrical and Chemical Properties of In–Ga–Sn–O Thin Films with Al2O3 Passivation Layer for Thin-Film Transistor Applications

钝化 辐照 材料科学 图层(电子) 光电子学 薄膜 溅射 原子层沉积 薄膜晶体管 溅射沉积 分析化学(期刊) 纳米技术 化学 物理 核物理学 色谱法
作者
Kie Yatsu,Hyun-Ah Lee,Ick-Joon Park,Hyuck‐In Kwon
出处
期刊:ACS applied electronic materials [American Chemical Society]
卷期号:5 (5): 2528-2537 被引量:2
标识
DOI:10.1021/acsaelm.3c00006
摘要

In this paper, the effects of X-ray irradiation on the electrical performance of the direct current magnetron sputtered indium–gallium–tin oxide (IGTO) thin-film transistors (TFTs) passivated with an aluminum oxide (Al2O3) passivation layer were investigated. The radiation stability of IGTO TFTs passivated with the Al2O3 passivation layer was evaluated depending on the thicknesses of the channel and passivation layer as well as the deposition technique of the passivation layer, which was determined to achieve both excellent electrical stability and radiation tolerance. The chemical structures and surface morphologies of the IGTO thin films having an atomic composition of In:Ga:Sn = 66.2:31.3:2.5 before and after X-ray irradiation were characterized, and the X-ray irradiation induced persistent photocurrent effect on the IGTO thin films that ionizes the oxygen vacancy to the charged state was evaluated. The mechanisms of radiation damage to the IGTO TFTs were systematically proposed in terms of the generation, ionization, and compensation of oxygen vacancies. The different barrier roles of radio-frequency (RF) sputtering- and atomic layer deposition-based Al2O3 passivation layers were observed in the IGTO TFTs under X-ray irradiation, and the proposed devices passivated with the RF sputtering-based Al2O3 layer of up to 15 nm thickness exhibited the excellent radiation hardness (shifts of threshold voltage <0.02 V) under X-ray irradiation with a high dose of 1000 Gy. Further, the IGTO TFTs passivated with RF sputtering- and ALD-based Al2O3 layers exhibited excellent long-term stability over 18 days without an aging effect, as well as enhanced electrical bias stability of the device under positive bias stress and negative bias illumination stress with increasing thickness of the passivation layer. Thus, a radiation tolerant IGTO TFTs passivated with the Al2O3 passivation layer was proposed, and the corresponding mechanisms can provide meaningful understanding of the radiation stability of the oxide TFTs for operation in harsh X-ray irradiation environments.
最长约 10秒,即可获得该文献文件

科研通智能强力驱动
Strongly Powered by AbleSci AI
更新
PDF的下载单位、IP信息已删除 (2025-6-4)

科研通是完全免费的文献互助平台,具备全网最快的应助速度,最高的求助完成率。 对每一个文献求助,科研通都将尽心尽力,给求助人一个满意的交代。
实时播报
艾米完成签到,获得积分10
1秒前
Sunny完成签到 ,获得积分10
2秒前
艾米发布了新的文献求助10
4秒前
10秒前
集典完成签到 ,获得积分10
12秒前
Ultraman45发布了新的文献求助10
15秒前
Ultraman45发布了新的文献求助10
26秒前
27秒前
量子星尘发布了新的文献求助10
31秒前
32秒前
Ultraman45完成签到,获得积分10
33秒前
NexusExplorer应助江洋大盗采纳,获得10
34秒前
meow完成签到 ,获得积分10
39秒前
情怀应助lf采纳,获得10
41秒前
50秒前
51秒前
hta_chen完成签到,获得积分10
51秒前
lf发布了新的文献求助10
54秒前
hta_chen发布了新的文献求助10
56秒前
1分钟前
Zhy发布了新的文献求助10
1分钟前
李健的小迷弟应助He采纳,获得20
1分钟前
繁荣的青旋完成签到,获得积分10
1分钟前
1分钟前
1分钟前
嘟嘟嘟嘟完成签到 ,获得积分10
1分钟前
Zhy完成签到,获得积分10
1分钟前
量子星尘发布了新的文献求助10
1分钟前
科研通AI2S应助科研通管家采纳,获得10
1分钟前
1分钟前
lf发布了新的文献求助10
1分钟前
lei029发布了新的文献求助10
1分钟前
1分钟前
1分钟前
Tonyzad完成签到,获得积分10
1分钟前
He发布了新的文献求助20
1分钟前
江洋大盗发布了新的文献求助10
1分钟前
CATH完成签到 ,获得积分10
2分钟前
lei029完成签到,获得积分10
2分钟前
kingJames发布了新的文献求助10
2分钟前
高分求助中
A new approach to the extrapolation of accelerated life test data 1000
Picture Books with Same-sex Parented Families: Unintentional Censorship 700
ACSM’s Guidelines for Exercise Testing and Prescription, 12th edition 500
Nucleophilic substitution in azasydnone-modified dinitroanisoles 500
不知道标题是什么 500
Indomethacinのヒトにおける経皮吸収 400
Phylogenetic study of the order Polydesmida (Myriapoda: Diplopoda) 370
热门求助领域 (近24小时)
化学 材料科学 医学 生物 工程类 有机化学 生物化学 物理 内科学 纳米技术 计算机科学 化学工程 复合材料 遗传学 基因 物理化学 催化作用 冶金 细胞生物学 免疫学
热门帖子
关注 科研通微信公众号,转发送积分 3976619
求助须知:如何正确求助?哪些是违规求助? 3520720
关于积分的说明 11204567
捐赠科研通 3257359
什么是DOI,文献DOI怎么找? 1798716
邀请新用户注册赠送积分活动 877897
科研通“疑难数据库(出版商)”最低求助积分说明 806613