Self-adaptive passive temperature management for silicon chips based on near-field thermal radiation

材料科学 光电子学 基质(水族馆) 数码产品 工程物理 纳米技术 物理 电气工程 海洋学 地质学 工程类
作者
Sen Zhang,Wei Du,Wenjie Chen,Yongdi Dang,Naeem Iqbal,Yi Jin,Yungui Ma
出处
期刊:Journal of Applied Physics [American Institute of Physics]
卷期号:132 (22) 被引量:2
标识
DOI:10.1063/5.0121043
摘要

Temperature management in modern instruments is often a great task, particularly for silicon chip technologies against the background of the ever-increasing demanding for larger scale and higher density electronics integration. Enormous efforts have been made to solve this long-pending issue, mostly relying on active equipment that consume more energy and more space. Here, a compact thermal management technique for silicon chips is proposed, which is able to passively maintain the operation temperature of targets within a wide range of input power. The core part is a self-adaptive near-field thermal radiation system made of a phase-changeable metasurface and graphene/hBN heterostructure with surface plasmon/phonon modes. Numerically, we show that integrated with such a setup, a 0.1-mm thick silicon substrate could automatically maintain its operation temperature within a narrow window (∼333 ± 7 K) when loaded with heat power varied in 0.1–1 W cm−2. As a comparison, the temperature will change 614 or 319 K for a bare or blackbody-coated silicon substrate. The dynamic process of thermal homeostasis is discussed by using the transient thermal equation. The results imply that the current design is suitable for providing a compact, conformal thermal functional coat to passively manage temperatures of heated electronic components, particularly in vacuum.
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