Near-infrared polarization-sensitive photodetectionviainterfacial symmetry engineering of an Si/MAPbI3heterostructural single crystal

By utilizing the polar symmetry induced by the directional built-in electric field at the MAPbI 3 SC/Si heterostructure interface, large polarization ratios of 3.3 at 785 nm and 2.8 at 940 nm are achieved under the self-driven mode.