比较器
有效位数
逐次逼近ADC
CMOS芯片
电子工程
计算机科学
12位
电压
电压基准
低功耗电子学
电容器
模数转换器
电容感应
功率(物理)
电气工程
工程类
功率消耗
物理
量子力学
作者
Dong-Jin Kim,Kang-Yoon Lee
标识
DOI:10.1109/itc-cscc55581.2022.9894972
摘要
This paper presents a design of low power 8 bit 200KS/s Synchronous Successive Approximation Register analog to digital (SAR ADC) converter. The proposed architecture is composed of Input Buffer, Dynamic Latch Comparator, Capacitive DAC, Reference Voltage Generator, and SAR Logic. Dynamic latch comparator is used to reduce the leakage current. In order to implement low power, the architecture of SAR ADC has been used and medium resolution among the architectures. The proposed structure is designed using 55-nm Complementary Metal-Oxided-Semiconductor (CMOS) process technology with 1V of supply voltage and 781.2 Hz of input frequency. The results of the architecture are achieved an effective number of bits (ENOB) of 7.997 bits and a signal to noise, distortion ration (SNDR) level of 49.899 dB with sampling rate 200KS/s. Furthermore, total power consumption of the structure is 245 uW.
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