Suppression of Charge Carrier Recombination in Ta3N5 Photoanode via Defect Regulation: A Theoretical Investigation

Intrinsic defects, charge states, O impurities, and metal doping are the main factors in determining the recombination dynamics of Ta 3 N 5 . Ionizing N vacancies and Mg doping efficiently mitigate defect-induced charge carrier recombination.