材料科学
钙钛矿(结构)
图层(电子)
锡
钙钛矿太阳能电池
纳米技术
光电子学
化学工程
工程物理
冶金
工程类
作者
Feifei He,Tianpeng Li,Tao Shen,Yinghan Zhao,Zuoming Jin,Zhiguo Zhang,Yu Pu,Liangliang Deng,Lang Qin,Yiqiang Zhan,Yunqi Liu,Yang Wang,Jia Liang
标识
DOI:10.1002/adfm.202405611
摘要
Abstract With excellent biocompatibility, a narrow bandgap, and long thermal carrier lifetime, tin‐based perovskite solar cells (TPSCs) are promising within the solar technology. The fullerene derivative indene‐C 60 bisadduct (ICBA) is recognized as the most efficient electron‐transport material for TPSCs, thanks to its suitable band structure. Nevertheless, the limited electron transport capability and susceptibility to moisture penetration of ICBA have hindered the progress of TPSCs. Herein, the study proposes a new hydrophobic electron‐transport layer (ETL) comprising a surface‐anchored non‐fullerene n‐type semiconducting polymer layer, poly (naphthalene diimide‐alt‐dithiophenebezothiadiazole) (PNDI‐BT), in conjunction with ICBA. PNDI‐BT exhibits high electron mobilities, a fitting band structure, robust interaction with Sn‐based perovskites, and exceptional moisture resistance, effectively addressing the shortcomings of ICBA. Consequently, this innovative hydrophobic ETL of PNDI‐BT/ICBA enhances electron transport and protects Sn‐based perovskites from moisture. As a result, the inverted TPSCs with the new hydrophobic ETL achieve an impressive efficiency of 13.90%, surpassing TPSCs with the ICBA layer (12.75%). Moreover, even after 1000 h of storage in ambient atmosphere, the encapsulated TPSC maintains a remarkable 81% of its initial efficiency. This comprehensive study seamlessly integrates the synthesis of non‐fullerene n‐type semiconducting polymer and device fabrication, providing valuable insights into designing cutting‐edge ETL structure for inverted TPSCs.
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