Properties of O-Doped CuI Thin Films by Chemical Vapor Deposition (CVD) at Different Deposition Flow Rate

The effect of oxygen doping to the properties of CuI thin films was studied. The doping of oxygen to the CuI thin films was done by using single furnace chemical vapor deposition (CVD) method at different oxygen gas flow rate (e.g 10, 20, 30, 40 and 50 sccm). The CuI thin film was first deposited by using mister atomizer at constant CuI solution concentration of 0.05M. The surface morphology and electrical properties of O-doped CuI was studied. The field emission scanning electron microscopy (FESEM) was used to observe the morphology of O-doped CuI thin films. The FESEM images revealed that all the CuI thin films deposited were uniform with the existence of nanostructured CuI particle. The EDX measurement confirm the existence of Cu:I in the films and also the variation of oxygen ratio in the CuI thin films as the oxygen was introduced. The resistivity of 10 1 Ωcm to 10 3 Ωcm at constant voltage of-5V to 5V was obtained for the O-doped CuI thin films.