光探测
光电探测器
响应度
材料科学
光电子学
异质结
太赫兹辐射
比探测率
紫外线
红外线的
光学
宽带
物理
作者
Jiandong Yao,Jianmei Shao,Yingxin Wang,Ziran Zhao,Guowei Yang
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2015-01-01
卷期号:7 (29): 12535-12541
被引量:206
摘要
Broadband photodetection is central to various technological applications including imaging, sensing and optical communications. On account of their Dirac-like surface state, Topological insulators (TIs) are theoretically predicted to be promising candidate materials for broadband photodetection from the infrared to the terahertz. Here, we report a vertically-constructed ultra-broadband photodetector based on a TI Bi2Te3-Si heterostructure. The device demonstrated room-temperature photodetection from the ultraviolet (370.6 nm) to terahertz (118 μm) with good reproducibility. Under bias conditions, the visible responsivity reaches ca. 1 A W(-1) and the response time is better than 100 ms. As a self-powered photodetector, it exhibits extremely high photosensitivity approaching 7.5 × 10(5) cm(2) W(-1), and decent detectivity as high as 2.5 × 10(11) cm Hz(1/2) W(-1). In addition, such a prototype device without any encapsulation suffers no obvious degradation after long-time exposure to air, high-energy UV illumination and acidic treatment. In summary, we demonstrate that TI-based heterostructures hold great promise for addressing the long lasting predicament of stable room-temperature high-performance broadband photodetectors.
科研通智能强力驱动
Strongly Powered by AbleSci AI