Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC MOSFETs with Various Channel Lengths

The impact of channel length on the static, dynamic, and short-circuit performance of 1.2 kV-rated 4H-SiC inversion-channel (Inv) power MOSFETs is reported for the first time. Devices were successfully fabricated with the various channel lengths (L _CH =0.3 to 1.1 μ m) in a 6 inch commercial foundry and they were packaged in TO-247 cases for all the testing. The devices with 0.3 μ m channel length were found to have the lowest on-resistance, best High Frequency Figures-of-Merit (HF-FOMs), and fastest switching performance, but worst short-circuit (SC) capability. The SC capability improved with increasing channel length at the penalty of an increase in the on-resistance. The fabricated 1.2 kV SiC MOSFETs were compared with commercially available 1.2 kV Si IGBTs in terms of the power losses and short-circuit capability: the 1.2 kV SiC power MOSFETs with long channel length can outperform the Si IGBT with lower power losses and superior short-circuit capability.