硒化镉
材料科学
薄膜
异质结
化学浴沉积
基质(水族馆)
肖特基二极管
纳米线
光电子学
硅
硒化物
半导体
沉积(地质)
肖特基势垒
图层(电子)
硫化镉
纳米技术
化学工程
量子点
冶金
硒
古生物学
沉积物
工程类
生物
海洋学
二极管
地质学
作者
Fatih Oksuzoglu,H. Metin,Ali Havare,Sevda İldan Özmen,Muhittin Ünal,Cem Tozlu
出处
期刊:Journal of Photonics for Energy
[SPIE - International Society for Optical Engineering]
日期:2020-05-15
卷期号:10 (02): 1-1
被引量:5
标识
DOI:10.1117/1.jpe.10.025502
摘要
Cadmium selenide (n-CdSe) thin films were grown on a silicon substrate with a polished surface and applied to the Schottky type device structure. The n-CdSe thin films produced depended on various deposition times at 70°C by the use of the chemical bath deposition technique. XRD results show that the fabricated thin films consist of both cubic and hexagonal crystal systems. The morphology of CdSe was formed in nanograins and nanowire structures with respect to deposition times of 6 and 10 h, respectively. In addition to structural analysis of CdSe thin films, CdSe nanowires were used as an interfacial layer in a metal–semiconductor device to investigate its effects on the electrical and photosensitive characteristics of the device. As well as under forward bias current–voltage (I − V) conditions, the space charge limited current conduction behaviors were identified at low voltages. The results showed that the film produced at 10 h has a better performance compared to that produced at 6 h in terms of increased electric current.
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